Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability

Amorphous In2O3 is an emergingmetal oxidesemiconductor that is used widely because of its high mobility andsolution processability. Fully aqueous processing methods withoutchemical additives and to avoid organic solvents are being activelydeveloped. Issues related to charge trapping, such as high thresholdvoltage and low bias stress stability, can hinder the applicationsof these thin films. In this work, solution-processed In2O3 layers doped with MoO3 were prepared tostudy the tunability of the electrical performance characteristicssuch as charge carrier mobility, threshold voltage, and subthresholdswing. The doping was found to sufficiently change the oxygen contentof the film while only minimally affect the film morphology. Usingthe optimal 0.49 mol % MoO3 content, the threshold voltageof the device with pristine In2O3 was reducedfrom 10 to 4 V, and bias stability improved by more than 50% undernegative voltages and by 25% under positive voltages. A resistiveload inverter was fabricated to demonstrate device applicability.This study demonstrates the tunability of metal oxide thin films preparedby an aqueous route with sub-1% doping.

Automated summary

In this study, solution-processed In2O3 layers doped with MoO3 were prepared to investigate the tunability of electrical performance characteristics. Doping was found to change the oxygen content of the film while minimally affecting the film morphology. By using the optimal MoO3 content, the threshold voltage of the device was reduced and bias stability improved significantly. A resistive load inverter was fabricated to demonstrate the applicability of the device.