Synthesis of a Tellurium Semiconductor with an Organic-Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors

Developmentof high-performance p-channel devices is in high demandfor implementing complementary metal-oxide semiconductor logic circuits.In this study, we propose a synthetic approach to high-performancep-type tellurium (Te) thin-film transistors (TFTs) passivated withan organic-inorganic hybrid passivation layer. A quasi-two-dimensionalTe channel is synthesized by the sputtering system at room temperature,and an organic-inorganic hybrid passivation layer is formedvia infiltration of the synthesis process, including diffusion andinfiltration of inorganic Al2O3 into an SU-8polymeric template, resulting in a high-performance p-type Te TFTwith a field-effect mobility of 13.6 cm(2)/(V s), a subthresholdswing of 6.15 V/decade, and a current on-off ratio of 1.35x 10(4). The synergistic effect of Al2O3 and SU-8 is systematically analyzed by implementing deviceswith hybrid passivation layers, enabling a significant improvementin the device performance compared with that of the device passivatedwith a single Al2O3 layer. Based on the chemicalstates and Raman response of the proposed structure, the reductionof oxidative Te states and the strain-induced shifts of the Ramanmodes are shown to attribute to the compensation for the thermal expansionmismatch and the decrease in the strain-induced damage, leading toenhanced device performance with excellent long-term stability over70 days in the air. Thus, our work demonstrates the great potentialof high-performance p-type Te TFTs for future electronic applications.

Automated summary

This study proposes a synthetic approach to high-performance p-type tellurium (Te) thin-film transistors (TFTs) by using an organic-inorganic hybrid passivation layer. The Te channel is synthesized at room temperature and the passivation layer is formed through the infiltration of inorganic Al2O3 into an SU-8 polymeric template. The hybrid passivation layer significantly improves the device performance compared to a single Al2O3 layer, and the proposed structure shows enhanced long-term stability. This work demonstrates the great potential of high-performance p-type Te TFTs for future electronic applications.