期刊
ACS APPLIED NANO MATERIALS
卷 6, 期 17, 页码 16046-16054出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.3c03220
关键词
heterojunction; electron mobility; optoelectronic storage; logic gate; microneural network; machine vision
The integration of data storage and computing capabilities has led to the development of a microneuronal network system with high precision and speed rates. This article introduces an optoelectronic storage device based on a transistor, which enables the construction of logic gates and the simulation of future machine vision applications. The microneural network system achieves a recognition rate of 96.3% in a multidimensional color space.
The integration of data storage and computing capabilities into a single physical component has led to the development of a microneuronal network system with high precision and speed rates. To achieve this system architecture, bold innovations in the underlying hardware structure and neural network architecture are required. This article introduces an optoelectronic storage device based on the MoS2/h-BN/graphene van der Waals heterojunction transistor. At room temperature, the transistor exhibits an electron mobility of up to 340 cm(2)/(V center dot s) and a large storage window due to its unique van der Waals heterojunction. The transistor's reconfigurable nonvolatile optoelectronic properties enable the construction of logic gates, including AND, OR, NAND, and NOR. Leveraging these logic gates, a microneural network system is created that simulates future machine vision applications. The system achieves a remarkable recognition rate of 96.3% for images in a multidimensional color space, demonstrating the significant development potential of the microneural network system based on the MoS2/h-BN/graphene vdW heterojunction transistor in future machine vision.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据