期刊
SURFACES AND INTERFACES
卷 41, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.surfin.2023.103236
关键词
Doped Si ultrathin film; Boron concentration; Time-dependent second harmonic generation; Charge trapping; Multiphoton absorption
The evaluation of dopant concentration is crucial in advanced field-effect transistor fabrication. This study utilizes the unique characteristics of boron traps in in-situ boron doped Si ultrathin film (DSUTF) to examine the evolution of electric field using time-dependent second harmonic generation (TD-SHG). The presence of oxygen molecules weakens the electric field, leading to a reduction in SHG intensity. Furthermore, there is a strong monotonic correlation between the boron induced electric field and the dopant concentration.
The evaluation of dopant concentration is essential in fabricating advanced field-effect transistors. In this study, we effectively leverage the unique characteristics of boron traps in the in-situ boron (B) doped Si ultrathin film (DSUTF) to examine the evolution of electric field through time-dependent second harmonic generation (TD-SHG). During the laser irradiation, internal photoemission (IPE) occurs in our system due to multiphoton ab-sorption which enable the electron injected from Si to SiO2. Our findings demonstrate that the presence of ox-ygen molecules weakens the electric field, resulting in a consequential reduction in SHG intensity. Therefore, we propose a model to elucidate the relationship between electrons and oxygen. Furthermore, we observe a robust monotonic correlation between the boron induced electric field and the dopant concentration. These results are consistent with first-principles calculation and capacitance-voltage measurement. Utilizing TD-SHG method for inspection of B dopant concentration in DSUTF provide a productive way for in-line inspection in semiconductor fabrication.
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