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R. Y. Khosa et al.
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P. K. Chang et al.
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F. Arith et al.
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Noritake Isomura et al.
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Wenbo Li et al.
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D. P. Ettisserry et al.
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Passivation of SiC device surfaces by aluminum oxide
A. Hallen et al.
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Y. F. Han et al.
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