Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiNx and GaN

Gallium Nitride (GaN) is becoming increasingly attractive due to its advantages in efficiency, switching speed, and high temperature operation. Although the performance of GaN in light-emitting devices and power electronics has been significantly improved, the need to reduce the power loss of GaN-based devices still exists. In this paper, Si derived from the SiNx sub-cycle in plasma-enhanced atomic layer deposition (PEALD) was used as a dopant to improve the ohmic contact resistance of GaN. The doping concentration of Si ranging from 0% to 33 at % were obtained by varying the SiNx sub-cycle ratio from 0% to 50%. A 13.56 at% Si-doped GaN film with moderate Si-N bonding deposited at a SiNx sub-cycle ratio of 20% exhibits the highest carrier concentration of 1.29 x 1018 cm-3 and the lowest resistivity of 0.78 & OHM;& BULL;cm. The transmission line model (TLM) measurements show that the as-deposited Si-doped GaN has a specific contact resistance of 4.77 x 101 & omega;& BULL;cm2, which decreases to 8.15 x 10-4 & omega;& BULL;cm2 after annealing at 500 & DEG;C.

Automated summary

In this paper, Si derived from the SiNx sub-cycle in plasma-enhanced atomic layer deposition (PEALD) was used as a dopant to improve the ohmic contact resistance of GaN. The highest carrier concentration and lowest resistivity were achieved in a Si-doped GaN film deposited at a SiNx sub-cycle ratio of 20%.