Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces

Recent observations of macroscopic quantum condensation using electron-hole (e-h) bilayers have activated the research of its application to electronics. However, to the best of our knowledge, no attempts have been made to observe the condensation in silicon, the major material in electronics, due to the lack of technology to form closely-packed and uniform bilayers. Here, we propose a method to meet such requirements. Our method uses the transient response of carriers to a rapid gate-voltage change, permitting the self-organized bilayer formation at the metal-oxide-semiconductor interface with an e-h distance as small as the exciton Bohr radius. Recombination lifetime measurements show that the fast process is followed by a slow process, strongly suggesting that the e-h system changes its configuration depending on carrier density. This method could thus enable controlling the phase of the e-h system, paving the way for condensation and, ultimately, for low-power cryogenic silicon metal-oxide-semiconductor devices. Recent observations of macroscopic quantum condensation using electron-hole (e-h) bilayers have activated the research of its application to electronics. The authors propose and demonstrate a method for the formation of a self-organized bilayer at the Si MOS interface with an e-h distance of the order of the exciton Bohr radius, which paves the way for condensation and, ultimately, low-power cryogenic Si MOS devices.

Automated summary

Recent observations of macroscopic quantum condensation using electron-hole (e-h) bilayers have sparked research into their application in electronics. However, attempts to observe condensation in silicon, the major material in electronics, have been hindered by a lack of technology to form closely-packed and uniform bilayers. In this study, the authors propose a method that utilizes the transient response of carriers to a rapid gate-voltage change, enabling the self-organized formation of bilayers at the metal-oxide-semiconductor interface with an e-h distance as small as the exciton Bohr radius. The findings suggest that the e-h system changes its configuration depending on carrier density, which could lead to the development of low-power cryogenic silicon metal-oxide-semiconductor devices.