Atomic-layer-deposited H:MoOx function layer as efficient hole selective passivating contact in silicon solar cells

Transition metal oxides deposited by Atomic Layer Deposition (ALD) exhibit the potential to allow for doping modification by different reaction precursors and annealing during the deposition process. In this work, we demonstrate ALD-deposited hydrogenated molybdenum oxide (H:MoOx) as an efficient hole selective passivating contact for p-type crystalline silicon solar cell. The precursor and deposition tem-perature has a significant impact on the H:MoOx thin films, leading to the variation in degree of hy-drogenation and work function. Employing H:MoOx thin films as hole selective passivating contacts for c-Si(p), a low contact resistivity of 72.6 mU cm2 and a high iVoc of 624 mV can be realized. Finally, c-Si(p) solar cell with H:MoOx thin film as hole selective passivating contact showed an increased power con-version efficiency from 15.48% (without H:MoOx) to 17.23% (with H:MoOx). The results show an effective stage to employ ALD-deposited high work function hydrogenated transition metal oxide as hole selective passivating contact. & COPY; 2023 Elsevier Ltd. All rights reserved.

Automated summary

In this work, the potential of hydrogenated molybdenum oxide (H:MoOx) deposited by Atomic Layer Deposition (ALD) as an efficient hole selective passivating contact for p-type crystalline silicon solar cell is demonstrated. The results show a significant impact of precursor and deposition temperature on the properties of H:MoOx thin films, leading to variations in hydrogenation degree and work function. The H:MoOx thin film as a hole selective passivating contact achieves low contact resistivity (72.6 mU cm2) and high open-circuit voltage (624 mV), resulting in an increased power conversion efficiency of the solar cell from 15.48% to 17.23%.