Zinc Chloride-Treated Indium Sulfide as Buffer Layer for Cd-Free Antimony Selenide Solar Cells

Article Chemistry, Physical

Reactively sputtered CdS:O buffer layers for substrate Sb2Se3 solar cells

Yufan Liu et al.

Summary: This study improves the performance of Sb2Se3 solar cells by preparing CdS:O buffer layers and using CBD-CdS to repair interface damage. Optimizing the composition and phase of the composite buffer allows for the achievement of wide band-gap buffer layers and improvement in device spectra response and JSC, VOC parameters.

JOURNAL OF ALLOYS AND COMPOUNDS (2023)

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Article Chemistry, Physical

High-sensitivity flexible position sensing in a Cu(In,Ga)Se2 multi-layer heterojunction tuned by piezo-pyroelectric effect

Jihong Liu et al.

Summary: In this study, a high-performance flexible position sensitive detector (PSD) made of Cu(In,Ga) Se2 (CIGS) multi-layer heterojunction material is developed. The introduction of piezoelectric and pyroelectric effects enhances the PSD's performance, resulting in excellent response and position sensitivity in a broad wavelength range.

NANO ENERGY (2023)

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Article Engineering, Electrical & Electronic

The low temperature pyrolysis preparation of thin film and its application in Sb2S3 thin film solar cells

Xi Cui et al.

Summary: In2S3 thin films were successfully prepared by low temperature pyrolysis of In-BDCA complex and applied as electron transport layer in Sb2S3 thin film solar cells, demonstrating good photovoltaic performance.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

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Article Materials Science, Multidisciplinary

Impact of annealing on the growth dynamics of indium sulphide buffer layers

Shafiq Ahmed et al.

Summary: Thin films of Indium sulphide were successfully deposited on corning glass substrate by thermal evaporation. Annealing treatment led to the formation of different phases with varying properties, such as absorption coefficient, bandgap, carrier concentration, and mobility. These films are suitable for photo-conduction devices and PV solar cell design.

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T (2022)

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Article Electrochemistry

Enhanced interface properties of solution-processed antimony sulfide planar solar cells with n-type indium sulfide buffer layer

Junhui Shi et al.

Summary: In this study, n-type indium sulfide (In2S3) was used as a buffer layer to improve the performance of Sb2S3 thin film solar cells, resulting in higher power conversion efficiency. The optimized chemical bath deposition process enhanced the compactness and crystallinity of the thin films. This work provides a new insight into the use of non-toxic In2S3 as a buffer layer in Sb2S3 planar solar cells.

ELECTROCHIMICA ACTA (2021)

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Article Energy & Fuels

CZTS nanoparticles as an effective hole-transport layer for Sb2Se3 thin-film solar cells

Fangling Mu et al.

Summary: By utilizing CZTS nanoparticles as a hole-transport layer, the back interface carrier recombination in Sb2Se3 solar cells can be effectively suppressed, leading to a significant improvement in carrier collection efficiency and ultimately achieving a champion efficiency of 6.06% in the n-i-p Sb2Se3 solar cells.

SOLAR ENERGY (2021)

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Article Multidisciplinary Sciences

Revealing composition and structure dependent deep-level defect in antimony trisulfide photovoltaics

Weitao Lian et al.

Summary: Antimony trisulfide is a promising light-harvesting material known for its stability and elemental abundance, yet little is understood about its defect properties. Through deep-level transient spectroscopy, researchers discovered three different deep-level defects, providing insights for enhancing the efficiency of Sb2S3 solar cells.

NATURE COMMUNICATIONS (2021)

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Article Chemistry, Physical