4.8 Article

Reverse-bias resilience of monolithic perovskite/silicon tandem solar cells

期刊

JOULE
卷 7, 期 9, 页码 1992-2002

出版社

CELL PRESS
DOI: 10.1016/j.joule.2023.07.017

关键词

-

向作者/读者索取更多资源

Metal halide perovskite/silicon tandem solar cells show improved stability under reverse-bias conditions compared to perovskite single-junction devices. The low reverse-bias diode current in the silicon subcell protects the perovskite subcell from degradation. Monolithic perovskite/silicon tandems have a higher technology readiness level in tackling reverse bias and partial shading challenges, making them advantageous for commercialization.
Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据