4.8 Article

Large anomalous Hall effect in a half-Heusler antiferromagnet

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NATURE PHYSICS
卷 12, 期 12, 页码 1119-+

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NATURE PUBLISHING GROUP
DOI: 10.1038/NPHYS3831

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资金

  1. Gordon and Betty Moore Foundation EPiQS Initiative [GBMF3848]
  2. NSF [DMR-1554891]
  3. ARO [W911NF-16-1-0034]
  4. NSF of China [11374033]
  5. DOE Basic Energy Sciences Grant [DE-SC0012509]
  6. STC Center for Integrated Quantum Materials, NSF Grant [DMR-1231319]
  7. Bose Fellows Program at MIT
  8. National Science Foundation [DMR-1157490]
  9. State of Florida
  10. US Department of Energy
  11. U.S. Department of Energy (DOE) [DE-SC0012509] Funding Source: U.S. Department of Energy (DOE)
  12. Direct For Mathematical & Physical Scien
  13. Division Of Materials Research [1554891] Funding Source: National Science Foundation

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The quantum mechanical (Berry) phase of the electronic wavefunction plays a critical role in the anomalous(1,2) and spin Hall effects(3,4), including their quantized limits(5-7). While progress has been made in understanding these effects in ferromagnets(8), less is known in antiferromagnetic systems. Here we present a study of antiferromagnet GdPtBi, whose electronic structure is similar to that of the topologically non-trivial HgTe (refs 9-11), and where the Gd ions offer the possibility to tune the Berry phase via control of the spin texture. We show that this system supports an anomalous Hall angle Theta(AH) > 0.1, comparable to the largest observed in bulk ferromagnets(12) and significantly larger than in other antiferromagnets(13). Neutron scattering measurements and electronic structure calculations suggest that this effect originates from avoided crossing or Weyl points that develop near the Fermi level due to a breaking of combined time-reversal and lattice symmetries. Berry phase effects associated with such symmetry breaking have recently been explored in kagome networks(14-17); our results extend this to half-Heusler systems with non-trivial band topology. The magnetic textures indicated heremay also provide pathways towards realizing the topological insulating and semimetallic states(9-11,18,19) predicted in this material class.

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