4.8 Review

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

期刊

NATURE PHOTONICS
卷 10, 期 4, 页码 216-226

出版社

NATURE RESEARCH
DOI: 10.1038/NPHOTON.2015.282

关键词

-

资金

  1. US Department of Energy, Office of Basic Energy Sciences [DESC0013883, DESC0012635]
  2. National Science Foundation [DMR-1410407, 1420451]
  3. Air Force Office of Scientific Research [FA9550-14-1-0268]
  4. Direct For Mathematical & Physical Scien
  5. Division Of Materials Research [1410407] Funding Source: National Science Foundation
  6. Direct For Mathematical & Physical Scien
  7. Division Of Materials Research [1420451] Funding Source: National Science Foundation

向作者/读者索取更多资源

Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichal-cogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin-and valley-dependent properties.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据