期刊
NATURE PHOTONICS
卷 10, 期 5, 页码 307-+出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NPHOTON.2016.21
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资金
- UK Engineering and Physical Sciences Research Council [EP/J012904/1, EP/J012815/1]
- Royal Society
- Engineering and Physical Sciences Research Council [EP/J012815/1, EP/J012904/1] Funding Source: researchfish
- EPSRC [EP/J012904/1, EP/J012815/1] Funding Source: UKRI
Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm(-2), a room-temperature output power exceeding 105 mW and operation up to 120 degrees C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm(-2) in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic-electronic integration.
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