Resonant THz detection by periodic multi-gate plasmonic FETs

We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with distinct carrier concentrations and velocities, giving rise to harmonic behaviors. The resulting frequency spectrum of DC voltage response is composed of enhanced and suppressed regions. In the enhanced region, the amplitude of response voltage can be enlarged up to similar to 100% compared to that in a uniform channel device. The distribution pattern of those regions is directly related to the number of gate sections (N (s)). A mapping of response amplitude in a N (s)-frequency scale is created, which helps distinguish enhanced/suppressed regions and locate optimal operating parameters.

Automated summary

We demonstrate that a periodic multi-grated-gate structure can be used in THz plasmonic FETs (TeraFETs) to enhance THz detection sensitivity. By introducing spatial non-uniformity through separated gate sections, regions with different carrier concentrations and velocities are created, resulting in harmonic behaviors. The frequency spectrum of the DC voltage response consists of enhanced and suppressed regions. In the enhanced region, the response voltage amplitude can be increased up to approximately 100% compared to a uniform channel device. The distribution pattern of these regions is directly related to the number of gate sections (N (s)). A mapping of response amplitude in an N (s)-frequency scale is created, which aids in distinguishing enhanced/suppressed regions and locating optimal operating parameters.