Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films

Al-doped ZnO (AZO) thin films are effective n-type semiconductors for ultraviolet (UV) detection because of their low cost, high electron mobility, and high sensitivity to UV light, especially in the UVA spectrum. However, a reasonable compromise between performance (such as sensitivity, detectivity, and response time) and fabrication ease remains an obstacle to the practicability of AZO-based UV photodetectors. To address this issue, we propose an efficient strategy to achieve a large AZO photoactive area for outstanding performance, along with a facile sol-gel method. Consequently, the device exhibits a superb on/off ratio of >10(4), a high detectivity of 1.85 x 10(12) Jones, and a fast response speed under 365 nm UVA illumination without external energy consumption. Hence, this study suggests a self-powered and high-performance nanoporous AZO-based UVA detector with an environmentally friendly scalable process that satisfies industrial production requirements for numerous practical UV-detection applications.

Automated summary

Al-doped ZnO (AZO) thin films are effective n-type semiconductors for UV detection. However, finding a balance between performance and fabrication ease remains a challenge for practical AZO-based UV photodetectors. In this study, a strategy is proposed to achieve a large photoactive area for outstanding performance using a facile sol-gel method.