Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD

Silicon nitride, silicon oxide, and silicon oxynitridethin filmswere deposited on the Si substrate by inductively coupled plasma chemicalvapor deposition and annealed at 1100 & DEG;C for 3 min in an Ar environment.Silicon nitride and silicon oxide films deposited at ratios of thereactant flow rates of SiH4/N-2 = 1.875 and SiH4/N2O = 3, respectively, were Si-rich, while Siexcess for the oxynitride film (SiH4/N-2/N2O = 3:2:2) was not found. Annealing resulted in a thicknessdecrease and structural transformation for SiO (x) and SiN (x) films. Nanocrystallinephases of Si as well as & alpha;- and & beta;-Si3N4 were found in the annealed silicon nitride film. Compared to oxideand nitride films, the oxynitride film is the least susceptible tochange during annealing. The relationship between the structure, composition,and optical properties of the Si-based films has been revealed. Ithas been shown that the calculated optical parameters (refractiveindex, extinction coefficient) reflect structural peculiarities ofthe as-deposited and annealed films.

Automated summary

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on Si substrate using inductively coupled plasma chemical vapor deposition and annealed in Ar environment at 1100℃ for 3 minutes. The composition and structural properties of the films were investigated, and it was found that annealing led to thickness decrease and structural transformation. Nanocrystalline phases of Si and Si3N4 were observed in the annealed silicon nitride film. The calculated optical parameters were shown to reflect the structural peculiarities of the as-deposited and annealed films.