Impact of Y2O3 Nanosheets on the Microstructural Characteristics of Alq3 Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance

In the present study,tris-(8-hydroxyquinoline) aluminum (Alq(3)) and tris-(8-hydroxyquinoline)aluminum/yttrium oxide Alq(3)/Y2O3 weresynthesized by a facile chemicalroute. The crystal structure, surface morphological nature, and particlesize were identified by X-ray diffraction (XRD), scanning electronmicroscopy (SEM), and transmission electron microscopy (TEM) micrographs.Ag/Alq(3)/p-Si/Al and Ag/Alq(3):Y2O3/p-Si/Al diodes were fabricated by the thermal evaporationtechnique and the electrical characteristics were evaluated from the I-V plots in dark and under illuminationintensity. Thermionic emission theory, Cheung-Cheung, and Nordmodel have been applied to define the main electronic parameters likeseries resistance (R (s)), barrier height(& phi;(b)), and ideality factor (n). Thehybrid Ag/Alq(3):Y2O3/p-Si/Al dioderevealed a nonideal behavior with high shunt resistance R (sh) and good photocurrent sensitivity. The C/G-V analysis indicatedthat both C and G are strongly affectedby the presence of trapped charge carriers at the interface states.The obtained results indicated that R (s) was decreased whereas the carrier concentration (N (a)) was increased by loading Y2O3 nanosheets.

Automated summary

In this study, tris-(8-hydroxyquinoline) aluminum (Alq(3)) and tris-(8-hydroxyquinoline) aluminum/yttrium oxide (Alq(3)/Y2O3) were synthesized using a simple chemical route. The crystal structure, surface morphology, and particle size were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) images. Ag/Alq(3)/p-Si/Al and Ag/Alq(3):Y2O3/p-Si/Al diodes were fabricated and their electrical characteristics were evaluated under dark and illuminated conditions. The results showed that the hybrid Ag/Alq(3):Y2O3/p-Si/Al diode exhibited nonideal behavior with high shunt resistance (R(sh)) and good photocurrent sensitivity.