All-in-one supercapacitor devices based on nanosized Mn4+-doped WO3

In this study, nanosized Mn-doped WO3-based materials were used as electrode materials for high-performance supercapacitor devices. Various Mn concentrations (0.5, 1, and 1.5%) were used to change the defect structure of WO3, which improved the material's electrical properties. A thorough morpho-structural and defect structure analysis of the undoped and doped WO3 was performed through various characterization techniques, among which EPR and PL spectroscopy gave insight into the effect that Mn-doping caused on the defect structure and optical properties of WO3. The presence of Mn4+ ions and a high concentration of oxygen vacancies was observed, strongly influencing the electrode material when used in symmetric supercapacitors, where the electrochemical performance was tested. The symmetric supercapacitors were designed without booster materials (like carbon black) and showed increased specific capacitance (115 F/g) and energy density (16 Wh/Kg) values.

Automated summary

In this study, nanosized Mn-doped WO3-based materials were used as electrode materials for high-performance supercapacitor devices. The defect structure of WO3 was improved by using various Mn concentrations, leading to enhanced electrical properties. Characterization techniques such as EPR and PL spectroscopy revealed the effect of Mn-doping on the defect structure and optical properties of WO3. The presence of Mn4+ ions and oxygen vacancies strongly influenced the electrochemical performance of the electrode material in symmetric supercapacitors.