4.8 Article

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

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NATURE CHEMISTRY
卷 8, 期 5, 页码 470-475

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NATURE PUBLISHING GROUP
DOI: 10.1038/NCHEM.2473

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资金

  1. Ministry of Education (MOE) [ARC 26/13, MOE2013-T2-1-034, ARC 19/15MOE2014-T2-2-093, RGT18/13, RG5/13]
  2. Nanyang Technological University (NTU) in Singapore [M4081296.070.500000]
  3. National Research Foundation of the Prime Minister's Office, Singapore
  4. King Abdullah University of Science and Technology [BAS/1/1372-01-01]
  5. CCF [FCC/1/1972-03-01]

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The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures.

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