期刊
SCIENCE CHINA-MATERIALS
卷 66, 期 9, 页码 3501-3508出版社
SCIENCE PRESS
DOI: 10.1007/s40843-023-2480-x
关键词
hydrogen evolution; external electric field; vdW heterojunction; on-chip electrocatalysis; ion accumulation
By using on-chip microdevices, the concentration of hydronium ions in electrochemical double layers can be fine-tuned for efficient hydrogen evolution. The electrical tests reveal that the back-gate voltage promotes charge transfer and polarization, attracting hydronium ions to accumulate near the reaction interface. The hydrogen evolution current is significantly increased with the back-gated hydronium enrichment.
The reaction interface which governs the electrocatalytic behavior is notoriously hard to understand due to inadequate regulatory and detection methods. By using on-chip microdevices, we employ variable back-gate voltages to generate molecular polarization and thus fine-tune the concentration of hydronium ions (H3O+) in electrochemical double layers for efficient hydrogen evolution. Taking C-60/ MoS2 heterojunction as a prototype, electrical tests reveal that the back-gate promotes the charge transfer from C-60 to MoS2, leading to the polarization of C-60. In situ photoluminescence spectra verify that the polarized C-60 can attract H3O+ to accumulate in the vicinity of MoS2 in the external electric field. Profiting from the back-gated H3O+ enrichment, the hydrogen evolution current is increased by five times at -0.45 V-RHE when a 1.5-V back-gate voltage is applied. The insight into the reaction interface from manipulation to detection can facilitate diverse catalytic reactions.
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