相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review
Dao-Sheng Tang et al.
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER (2023)
Giant Manipulation of Phonon Hydrodynamics in Ferroelectric Bilayer Boron Nitride at Room Temperature and Beyond
Zhonghua Yang et al.
ACS APPLIED ENERGY MATERIALS (2022)
Emerging theory and phenomena in thermal conduction: A selective review
Jie Chen et al.
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY (2022)
Phonon-engineered extreme thermal conductivity materials
Xin Qian et al.
NATURE MATERIALS (2021)
Raman Analysis of E2 (High) and A1 (LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer
Yu Zeng et al.
APPLIED SCIENCES-BASEL (2020)
Electric field tuned anisotropic to isotropic thermal transport transition in monolayer borophene without altering its atomic structure
Zhonghua Yang et al.
NANOSCALE (2020)
Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films
Bo Sun et al.
NATURE MATERIALS (2019)
External electric field driving the ultra-low thermal conductivity of silicene
Guangzhao Qin et al.
NANOSCALE (2017)
Disparate Strain Dependent Thermal Conductivity of Two-dimensional Penta-Structures
Huake Liu et al.
NANO LETTERS (2016)
Lattice vibrations and Raman scattering in two-dimensional layered materials beyond graphene
Xin Lu et al.
NANO RESEARCH (2016)
50+ Years of Intrinsic Breakdown
Ying Sun et al.
IEEE ELECTRICAL INSULATION MAGAZINE (2013)
Direct experimental determination of the spontaneous polarization of GaN
Jonas Laehnemann et al.
PHYSICAL REVIEW B (2012)
Comparison of Fe and Si doping of GaN: An EXAFS and Raman study
M. Katsikini et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2011)
Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
A. Belabbes et al.
PHYSICAL REVIEW B (2011)
First-principles calculations of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at high pressures
Atsushi Togo et al.
PHYSICAL REVIEW B (2008)
Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN
W. S. Yan et al.
APPLIED PHYSICS LETTERS (2007)
Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
Y. C. Kong et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2006)
Static dielectric properties of carbon nanotubes from first principles
B Kozinsky et al.
PHYSICAL REVIEW LETTERS (2006)
Phonon structure in SrTiO3 under finite electric fields:: First-principles density functional approach -: art. no. 012304
II Naumov et al.
PHYSICAL REVIEW B (2005)
Transverse polarizabilities of carbon nanotubes: A Hartree-Fock and density functional study
EN Brothers et al.
PHYSICAL REVIEW B (2005)
First-principles approach to insulators in finite electric fields -: art. no. 117602
I Souza et al.
PHYSICAL REVIEW LETTERS (2002)
Dielectric properties and high tunability of Ba(Ti0.7Zr0.3)O3 ceramics under dc electric field
Z Yu et al.
APPLIED PHYSICS LETTERS (2002)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Infrared and Raman-scattering studies in single-crystalline GaN nanowires
HL Liu et al.
CHEMICAL PHYSICS LETTERS (2001)
Berry-phase treatment of the homogeneous electric field perturbation in insulators
RW Nunes et al.
PHYSICAL REVIEW B (2001)
Catalytic growth and characterization of gallium nitride nanowires
CC Chen et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2001)
Ab initio phonon dispersions of wurtzite AlN, GaN, and InN
C Bungaro et al.
PHYSICAL REVIEW B (2000)
High breakdown GaNHEMT with overlapping gate structure
NQ Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
