Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.

Automated summary

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. It begins with an introduction to electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices, followed by a brief explanation of ultrawide bandgap (UWBG) PSDs. Additionally, it discusses optically activated PSDs such as photoconductive semiconductor switches (PCSS) and optical bipolar PSDs, and concludes with an overview of PSD packaging and reliability considerations.