Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics

Nitride wide-bandgap semiconductors possess a wide tunable energy bandgap and abundant coordination anionic groups. This suggests their potential to display nonlinear optical (NLO) properties in the UV wavelength spectrum. This paper reports recent progress and material discoveries in exploring UV NLO structures using nitrides. The study emphasizes their underlying structure-property correlations in order to provide a summary of the potential performance and application value of important nitride NLO crystals. Additionally, the text underscores the benefits of nitrides in terms of optical transparency, second-harmonic-generation effects, and the birefringent phase matching output wavelength limits, while addressing current issues in terms of theoretical outlook and experimental exploration.

Automated summary

This paper reports recent progress and material discoveries in exploring UV nonlinear optical (NLO) properties using nitride wide-bandgap semiconductors. The study emphasizes the structure-property correlations and summarizes the potential performance and application value of important nitride NLO crystals. Additionally, it discusses the advantages of nitrides in terms of optical transparency, second-harmonic-generation effects, and birefringent phase matching output wavelength limits, as well as current issues in theoretical outlook and experimental exploration.