期刊
NANOTECHNOLOGY
卷 28, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/28/2/025701
关键词
photoluminescence; type-II excitons; time resolved spectroscopy
资金
- Deutsche Forschungsgemeinschaft (DFG) [Sonderforschungsbereich 1083]
- DFG [GRK 1782]
(Ga, In) As/GaAs/Ga(As, Sb) multi-quantum well heterostructures have been investigated using continuous wave and time-resolved photoluminescence spectroscopy at various temperatures. A complex interplay was observed between the excitonic type-II transitions with electrons in the (Ga, In) As well and holes in the Ga(As, Sb) well and the type-I excitons in the (Ga, In) As and Ga(As, Sb) wells. The type-II luminescence exhibits a strongly non-exponential temporal behavior below a critical temperature of T-c = 70 K. The transients were analyzed in the framework of a rate-equation model. It was found that the exciton relaxation and hopping in the localized states of the disordered ternary Ga(As, Sb) are the decisive processes to describe the dynamics of the type-II excitons correctly.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据