期刊
NANOTECHNOLOGY
卷 27, 期 50, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/50/505205
关键词
graphene; transistor; photolithography; polycarbonate; thermal treatment
资金
- Basic Science Research Program in the National Research Foundation (NRF) in the Ministry of Education of Korea [NRF-2014R1A1A2053599]
- NRF of the Ministry of Education of Korea [NRF-2014M3A7B4049369]
- Nano Material Technology Development Program in NRF in the Ministry of Education of Korea [NRF-2012M3A7B4035198]
- Priority Research Centers Program through NRF - Ministry of Education of Korea [NRF-2012R1A6A1029029]
The doping effect on graphene by photoresists were studied in this article. Polymethyl methacrylate (PMMA) is the usual choice for graphene transfer, but it is known to leave a significant amount of residue. PMMA results in strong hole doping and reduction of mobility of the graphene devices. Not only PMMA, but photoresists also leave residues during the lithographic steps and dope the graphene in strong hole-doping states along with water and oxygen molecules. In this article, we tested three types of photoresists for their effects on graphene's electrical properties. It was found that a specific photoresist can significantly reduce the amount of hole-doping of the graphene transistor more than other photoresists. The use of hydrophobic substrates and additional thermal treatment can help reducing the hole-doping further.
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