相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Improvement of Resistance Change Memory Characteristics in Ferroelectric and Antiferroelectric (like) Parallel Structures
Wonwoo Kho et al.
NANOMATERIALS (2023)
Synaptic Characteristic of Hafnia-Based Ferroelectric Tunnel Junction Device for Neuromorphic Computing Application
Wonwoo Kho et al.
NANOMATERIALS (2023)
Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications
Sungmun Song et al.
ADVANCED MATERIALS TECHNOLOGIES (2022)
Spike-time-dependent plasticity rule in memristor models for circuit design
Mouna Elhamdaoui et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2022)
High-Performance Neuromorphic Computing Based on Ferroelectric Synapses with Excellent Conductance Linearity and Symmetry
Shu-Ting Yang et al.
ADVANCED FUNCTIONAL MATERIALS (2022)
Stochastic artificial synapses based on nanoscale magnetic tunnel junction for neuromorphic applications
Wenxing Lv et al.
APPLIED PHYSICS LETTERS (2022)
An efficient deep neural network accelerator using controlled ferroelectric domain dynamics
Sayani Majumdar
NEUROMORPHIC COMPUTING AND ENGINEERING (2022)
Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses
Yichen Cai et al.
NPJ FLEXIBLE ELECTRONICS (2022)
Implementing ceramic materials into neuromorphic memory devices through oxide-based memristors
Bethany X. Rutherford
AMERICAN CERAMIC SOCIETY BULLETIN (2021)
Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights
A. Emelyanov et al.
NANOTECHNOLOGY (2020)
A highly CMOS compatible hafnia-based ferroelectric diode
Qing Luo et al.
NATURE COMMUNICATIONS (2020)
Sub-nanosecond memristor based on ferroelectric tunnel junction
Chao Ma et al.
NATURE COMMUNICATIONS (2020)
Experimental Demonstration of Supervised Learning in Spiking Neural Networks with Phase-Change Memory Synapses
S. R. Nandakumar et al.
SCIENTIFIC REPORTS (2020)
Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface-Engineered Hf0.5Zr0.5O2Tunnel Devices
Milena Cervo Sulzbach et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
Emerging Materials for Neuromorphic Devices and Systems
Min-Kyu Kim et al.
ISCIENCE (2020)
Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Benjamin Max et al.
ACS APPLIED ELECTRONIC MATERIALS (2020)
An efficient artificial neural network for damage detection in bridges and beam-like structures by improving training parameters using cuckoo search algorithm
H. Tran-Ngoc et al.
ENGINEERING STRUCTURES (2019)
Energy-Efficient Organic Ferroelectric Tunnel Junction Memristors for Neuromorphic Computing
Sayani Majumdar et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Low power, ultrafast synaptic plasticity in 1R-ferroelectric tunnel memristive structure for spiking neural networks
F. Zayer et al.
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS (2019)
Ferroelectric Tunneling Junctions Based on Aluminum Oxide/Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
Hojoon Ryu et al.
SCIENTIFIC REPORTS (2019)
RRAM-based synapse devices for neuromorphic systems
K. Moon et al.
FARADAY DISCUSSIONS (2019)
CMOS Compatible Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions for Neuromorphic Devices
Bernhard Mittermeier et al.
ADVANCED INTELLIGENT SYSTEMS (2019)
Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator
Matthew J. Marinella et al.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS (2018)
A phase-change memory model for neuromorphic computing
S. R. Nandakumar et al.
JOURNAL OF APPLIED PHYSICS (2018)
Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
Zhongrui Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Oxide-based RRAM materials for neuromorphic computing
XiaoLiang Hong et al.
JOURNAL OF MATERIALS SCIENCE (2018)
PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP
S. Lashkare et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Ferroelectricity in hafnium oxide thin films
T. S. Boescke et al.
APPLIED PHYSICS LETTERS (2011)
Self-organized computation with unreliable, memristive nanodevices
G. S. Snider
NANOTECHNOLOGY (2007)