期刊
NANOTECHNOLOGY
卷 27, 期 13, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/13/135602
关键词
gallium nitride; nanowires; PAMBE; photoluminescence; inversion domains; silicon oxide substrates
资金
- Agence Nationale de la Recherche (ANR) 'Investissement d'Avenir' (GaNeX) [ANR-11-LABX-2014]
- CNano Region Ile de France (ESSEN project)
- Agence Nationale de la Recherche (ANR) [ANR-10-EQPX-50]
We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.
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