期刊
NANOTECHNOLOGY
卷 27, 期 26, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/26/265707
关键词
GaN nanowire; Se-doped; field emission; work function
资金
- Australian Research Council [DP130102956]
- ARC Professorial Future Fellowship project [FT130100778]
- National Natural Science Foundation of China [51042010]
- Natural Science Key Project Foundation of Shaanxi Province, China [2013JZ018]
Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20-120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [ 0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V mu m(-1)) compared with the pure GaN NWs (7.0 V mu m(-1)). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs.
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