期刊
NANOTECHNOLOGY
卷 27, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/27/6/065203
关键词
heterojunctions; 2D materials; gallium chalcogenides; atomically thin layers; optics
资金
- Arizona State University
- Flemish Science Foundation (FWO-Vl)
- Methusalem foundation of the Flemish government
- FWO Pegasus Long Marie Curie Fellowship
- FWO Pegasus-short Marie Curie Fellowship
- [DMR-1552220]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1552220] Funding Source: National Science Foundation
Quasi-two-dimensional gallium chalcogenide heterostructures are created by transferring exfoliated few-layer GaSe onto bulk GaTe sheets. Luminescence spectroscopy measurements reveal that the light emission from underlying GaTe layers drastically increases on heterojunction regions where GaSe layers make contact with the GaTe. Density functional theory (DFT) and band offset calculations show that conduction band minimum (CBM) (valance band maximum (VBM)) values of GaSe are higher (lower) in energy compared to GaTe, forming type-I band alignment at the interface. Consequently, GaSe layers provide photo-excited electrons and holes to GaTe sheets through relatively large built-in potential at the interface, increasing overall exciton population and light emission from GaTe. Observed results are not specific to the GaSe/GaTe system but observed on GaS/GaSe heterolayers with type-I band alignment. Observed experimental findings and theoretical studies provide unique insights into interface effects across dissimilar gallium chalcogenides and offer new ways to boost optical performance by simple epitaxial coating.
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