High Performance of Nanostructured Cu2O-Based Photodetectors Grown on a Ti/Mo Metallic Substrate

In this work, cuprous oxide (Cu2O) thin films were prepared using a simplistic sputtering technique. The films were grown on both traditional fluorine-doped tin oxide (FTO) and Ti-metallic substrates. X-ray diffraction applied for investigation of the crystal structure proved that the Cu2O layer acquires the cubic structure with a (111) main peak at 2 & theta; of 36.46 & DEG;. The optical absorption and transmission were detected through the utilization of a UV-Vis spectrophotometer, and the optical bandgap for the Cu2O layer was determined to be similar to 2.15 eV using Tauc's equation. XPS and scanning electron microscopy were also performed for chemical structure and morphological investigation, respectively. The optoelectronic behaviors for the prepared samples were carried out using a Keithley source meter; the photocurrent density was measured in a range of applied voltage between -1 and 1 volt under the illumination of a xenon lamp with a power density of 100 mWcm(-2). External quantum efficiency, sensitivity, responsivity, and detectivity were computed using proprietary models based on the experimental data.

Automated summary

In this study, cuprous oxide (Cu2O) thin films were fabricated using a simple sputtering technique. The films were deposited on both traditional fluorine-doped tin oxide (FTO) and Ti-metallic substrates. X-ray diffraction analysis confirmed the cubic crystal structure of the Cu2O layer. Optical properties were characterized using a UV-Vis spectrophotometer, and the optical bandgap was determined to be approximately 2.15 eV. XPS and scanning electron microscopy were employed for structural and morphological investigations. Optoelectronic behavior was evaluated using a Keithley source meter, and various parameters such as external quantum efficiency, sensitivity, responsivity, and detectivity were calculated based on experimental data.