期刊
NANOSCALE RESEARCH LETTERS
卷 11, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-016-1272-5
关键词
Nonvolatile memory; Gadolinium; Supercritical CO2; Resistive switching; Silicon oxide
资金
- National Science Council Core Facilities Laboratory for Nano-Science and Nano-Technology in the Kaohsiung-Pingtung
- National Science Council of the Republic of China [MOST 104-2633-E-272 -001 -MY2, MOST 103-2633-E-272 -001]
Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
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