Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.

Automated summary

In this study, a novel structure of AlGaN UV LED with polarization-engineered heart-shaped AlGaN quantum barriers was proposed to address the issue of electron leakage. By decreasing the downward band bending and flattening the electrostatic field, significant improvements in electroluminescence, optical output power, and efficiency were achieved. This new EBL-free AlGaN LED shows great potential in enhancing optical power and producing highly efficient UV emitters.