Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application

The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create the sulfide structure as CdS nano-ropes form, followed by depositing on the Si-substrate by spin coating. The morphological, structural, and optical characteristics of the CdS structure were examined using X-ray diffraction, transmission, and scanning electron microscopy, photoluminescence, and UV-VIS spectroscopy. From X-ray diffraction analysis, the growing CdS spheres have a good crystal nature, with a high purity and desired c-axis orientation along the (002) plane, and the crystallinity was around 30 nm. According to optical characterization, high transparency was found in the visible-near-infrared areas of the electromagnetic spectrum, and the CdS spheres have a direct optical energy band gap of 3.2 eV. After that, the CdS/Si hetero-structured device was found to be improved remarkably after adding CdS. It showed that the forward current is constantly linear, while the dark current is around 4.5 mu A. Up to a bias voltage of 4 V, there was no breakdown, and the reverse current of the heterojunctions somewhat increased with reverse bias voltage, while the photocurrent reached up to 580 and 690 mu A for using 15 and 30 W/cm(2) light power, respectively. Additionally, the ideal factors for CdS/Si heterojunction were 3.1 and 3.3 for 15 and 30 W/cm(2) light power, respectively. These results exhibited high performance compared to the same heterojunction produced by other techniques. In addition, this opens the route for obtaining more enhancements of these values based on the changing use of sulfide structures in the heterojunction formation.

Automated summary

A high-quality n-type CdS on a p-type Si (111) photodetector device was successfully prepared using a one-pot method based on ns laser ablation in a liquid medium. The CdS structure exhibited good crystallinity and a direct optical energy band gap of 3.2 eV. The CdS/Si hetero-structured device showed improved performance compared to other techniques, with high photocurrent and ideal factors.