Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide

Silicon carbide (SiC) is a very promising platform for quantum information processing, as it can host room temperature solid state defect quantum bits. These room temperature quantum bits are realized by paramagnetic silicon vacancy and divacancy defects in SiC that are typically introduced by irradiation techniques. However, irradiation techniques often introduce unwanted defects near the target quantum bit defects that can be detrimental for the operation of quantum bits. Here, we demonstrate that by adding aluminum precursor to the silicon and carbon sources, quantum bit defects are created in the synthesis of SiC without any post treatments. We optimized the synthesis parameters to maximize the paramagnetic defect concentrations-including already established defect quantum bits-monitored by electron spin resonance spectroscopy.

Automated summary

Silicon carbide is a promising platform for quantum information processing due to its ability to host room temperature solid state defect quantum bits. By adding aluminum precursor to the synthesis process, quantum bit defects can be created without the need for post treatments. The synthesis parameters were optimized to increase the concentration of paramagnetic defects, including already established defect quantum bits, as monitored by electron spin resonance spectroscopy.