Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device's temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the introduction of a P-type GaN buried layer greatly weakens the peak of the channel electric field between the gate and drain of the device. This leads to a more uniform electric field distribution, a substantial reduction in the lattice temperature of the device, and a more uniform temperature distribution. Therefore, the phenomenon of negative resistance caused by self-heating effect is significantly mitigated, while the breakdown performance of the device is also notably enhanced.

Automated summary

In this paper, the introduction of a P-type GaN buried layer into the buffer layer of AlGaN/GaN HEMTs is studied using Silvaco TCAD software. The results show that the P-type GaN buried layer greatly weakens the peak of the channel electric field, leading to a more uniform electric field distribution and a substantial reduction in lattice temperature. This mitigates the negative resistance caused by self-heating effect and enhances the breakdown performance of the device.