Research on an Enhanced Detuned-Loading Effect in Integrated Two-Section DFB Lasers with High Modulation Bandwidths

A novel high-speed directly modulated two-section distributed-feedback (TS-DFB) semiconductor laser based on the detuned-loading effect is proposed and simulated. A grating structure is designed by the reconstruction-equivalent-chirp (REC) technique. A pi phase shift is introduced into the reflection grating, which can provide a narrow-band reflection region with a sharp falling slope on both sides of the reflection spectrum, thus enhancing the detuned-loading effect. Owing to its unique dual-falling-edges structure, the bandwidth can be improved even when the lasing wavelength shifts beyond the left falling edge due to a thermal effect in the actual test, in which condition the detuned-loading effect can be used twice, which greatly improves the yield. The modulation bandwidth is increased from 17.5 GHz for a single DFB laser to around 24 GHz when the lasing wavelength is located on the left falling edge of the TS-DFB laser based on the detuned-loading effect, and it can be increased to 22 GHz for the right side. An eight-channel laser array with precise wavelength spacing is investigated, with a side-mode suppression ratio (SMSR) >36 dB. In addition, TS-DFB lasers with uniform reflection gratings are studied, and simulated results show that the modulation characteristic is far inferior to the laser with a phase-shifted grating reflector.

Automated summary

In this study, a novel high-speed directly modulated two-section distributed-feedback semiconductor laser based on the detuned-loading effect is proposed and simulated. The laser features a grating structure designed using the reconstruction-equivalent-chirp (REC) technique and incorporates a pi phase shift in the reflection grating to enhance the detuned-loading effect. The experimental results show that this laser offers improved modulation bandwidth and yield.