期刊
NANOSCALE
卷 8, 期 27, 页码 13245-13250出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr02231f
关键词
-
类别
资金
- National Natural Science Foundation of China [21373065, 61474033, 61574050]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDA09040201]
- 973 Program of the Ministry of Science and Technology of China [2012CB934103]
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication
- Youth Innovation Promotion Association CAS
Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached similar to 5 x 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (eta) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据