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Hideki Hirayama et al.
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M. Beeler et al.
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Thomas F. Kent et al.
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Mixed Polarity in Polarization-Induced p-n Junction Nanowire Light-Emitting Diodes
Santino D. Carnevale et al.
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Q. Wang et al.
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Myunghee Kim et al.
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Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
Yoshitaka Taniyasu et al.
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Santino D. Carnevale et al.
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Jun Hee Choi et al.
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Cyril Pernot et al.
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L. Rigutti et al.
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Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
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Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
A. Bhattacharyya et al.
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Atomic and electronic structure of the nonpolar GaN(1(1)over-bar00) surface
M. Bertelli et al.
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Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires
J. Renard et al.
PHYSICAL REVIEW B (2009)
Ultraviolet light-emitting diodes based on group three nitrides
Asif Khan et al.
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Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires
Toma Stoica et al.
SMALL (2008)
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Stefan Birner et al.
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R. K. Debnath et al.
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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
Y Taniyasu et al.
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AlGaN multiple quantum well based deep UV LEDs and their applications
M. Asif Khan
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Unique optical properties of AlGaN alloys and related ultraviolet emitters
KB Nam et al.
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Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
LW Tu et al.
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Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
D Jena et al.
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