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注意:仅列出部分参考文献,下载原文获取全部文献信息。Silicon-based passivating contacts: The TOPCon route
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Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces
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PC1Dmod 6.2-Improved simulation of c-Si devices with updates on device physics and user interface
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Carrier-diffusion corrected J0-analysis of charge carrier lifetime measurements for increased consistency
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The recombination parameter J0
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Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
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Improved quantitative description of Auger recombination in crystalline silicon
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