相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Near-infrared to red-light emission and carrier dynamics in full series multilayer GaTe1-xSex (0≤x≤1) with structural evolution
Luthviyah Choirotul Muhimmah et al.
NPJ 2D MATERIALS AND APPLICATIONS (2023)
Study on the effect of size on InGaN red micro-LEDs
Ray-Hua Horng et al.
SCIENTIFIC REPORTS (2022)
Raman Scattering and Exciton Photoluminescence in Few-Layer GaSe: Thickness- and Temperature-Dependent Behaviors
Muhammad Usman et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2022)
van der Waals integration of GaN light-emitting diode arrays on foreign graphene films using semiconductor/graphene heterostructures
Anuj Kumar Singh et al.
NPG ASIA MATERIALS (2022)
The band-edge excitons observed in few-layer NiPS3
Ching-Hwa Ho et al.
NPJ 2D MATERIALS AND APPLICATIONS (2021)
Dual phase two-color emission observed in van der Waals GaTe planes
Luthviyah Choirotul Muhimmah et al.
APPLIED SURFACE SCIENCE (2021)
Nanowire Grid Polarization and Polarized Excitonic Emission Observed in Multilayer GaTe
Ching-Hwa Ho et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2020)
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
Junseok Jeong et al.
SCIENCE ADVANCES (2020)
Ga2Se3 Defect Semiconductors: The Study of Direct Band Edge and Optical Properties
Ching-Hwa Ho
ACS OMEGA (2020)
Complete-series excitonic dipole emissions in few layer ReS2 and ReSe2 observed by polarized photoluminescence spectroscopy
Ching-Hwa Ho et al.
NANO ENERGY (2019)
Probing Spatial Phonon Correlation Length in Post-Transition Metal Monochalcogenide GaS Using Tip-Enhanced Raman Spectroscopy
R. S. Alencar et al.
NANO LETTERS (2019)
Atomically Thin Ga2S3 from Skin of Liquid Metals for Electrical, Optical, and Sensing Applications
Manal M. Y. A. Alsaif et al.
ACS APPLIED NANO MATERIALS (2019)
High-Quality GaSe Single Crystal Grown by the Bridgman Method
Tao Wang et al.
MATERIALS (2018)
Curvature-dependent flexible light emission from layered gallium selenide crystals
Ching-An Chuang et al.
RSC ADVANCES (2018)
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Ming-Wei Chen et al.
NPJ 2D MATERIALS AND APPLICATIONS (2018)
Quantum Confinement and Gas Sensing of Mechanically Exfoliated GaSe
Yecun Wu et al.
ADVANCED MATERIALS TECHNOLOGIES (2017)
Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
Jose J. Fonseca et al.
ADVANCED MATERIALS (2016)
Electronic structure and properties of layered gallium telluride
U. Sandhya Shenoy et al.
CHEMICAL PHYSICS LETTERS (2016)
Photoluminescence and Photocurrents of GaS1-xSex Nanobelts
Chan Su Jung et al.
CHEMISTRY OF MATERIALS (2016)
Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection
Ching-Hwa Ho et al.
SENSORS AND ACTUATORS A-PHYSICAL (2016)
Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide
Chan Su Jung et al.
ACS NANO (2015)
Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals
Xufan Li et al.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (2015)
Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)
Shuji Nakamura
ANNALEN DER PHYSIK (2015)
Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals
Ching-Hwa Ho et al.
ADVANCED OPTICAL MATERIALS (2015)
High performance few-layer GaS photodetector and its unique photo-response in different gas environments
Shengxue Yang et al.
NANOSCALE (2014)
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
Alexey Chernikov et al.
PHYSICAL REVIEW LETTERS (2014)
Optically decomposed near-band-edge structure and excitonic transitions in Ga2S3
Ching-Hwa Ho et al.
SCIENTIFIC REPORTS (2014)
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Weijie Zhao et al.
ACS NANO (2013)
Quantitative Determination of Color Coordinates for Lumninescent Materials
Bao-gai Zhai et al.
LIQUID CRYSTALS AND RELATED MATERIALS II (2012)
Direct Optical Observation of Band-Edge Excitons, Band Gap, and Fermi Level in Degenerate Semiconducting Oxide Nanowires In2O3
Ching-Hwa Ho et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Atomically Thin MoS2: A New Direct-Gap Semiconductor
Kin Fai Mak et al.
PHYSICAL REVIEW LETTERS (2010)
Vapor-Solid Growth of One-Dimensional Layer-Structured Gallium Sulfide Nanostructures
Guozhen Shen et al.
ACS NANO (2009)
Characterization of indirect and direct interband transitions of anatase TiO2 by thermoreflectance spectroscopy
Ching-Hwa Ho et al.
APPLIED PHYSICS LETTERS (2008)
Photoconductance and photoresponse of layer compound photodetectors in the UV-visible region
Ching-Hwa Ho et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2006)
Optical properties of the interband transitions of layered gallium sulfide
C. H. Ho et al.
JOURNAL OF APPLIED PHYSICS (2006)
Visible luminescence and structural property of GaSe1-xSx (0≤x≤1) series layered crystals
CH Ho et al.
SOLID STATE COMMUNICATIONS (2005)
Optical properties of GaSe1-xSx series layered semiconductors grown by vertical Bridgman method
CC Wu et al.
MATERIALS CHEMISTRY AND PHYSICS (2004)
Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach
MOD Camara et al.
PHYSICAL REVIEW B (2002)