Luminescence Properties of the Hexagonal Boron Nitride Epilayer

As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h-BN) is gaining significant attention for its superior properties and wide applications. Although optical properties of h-BN have been partially revealed by using h-BN bulk single crystal, luminescence properties of the h-BN few-layer are rare due to its poor crystallinity. In this work, the h-BN epilayers have been synthesized on sapphire substrates by the submicron-spacing vapor deposition method. The crystalline quality of the h-BN epilayer is improved with the increase of the growth temperature, and the full width at half-maximum of the Raman peak is only & AP;13 cm(-1). The low temperature cathodoluminescence spectra of h-BN epilayers exhibit two strong deep ultraviolet (DUV) luminescence peaks at 5.49 and 5.35 eV, as well as a weaker and broader defect-related emission band at & AP;4.0 eV. The DUV emission band is ascribed to the recombination of bound excitons and its phonon replica. Based on the theoretically predicted energy levels, the 4.0 eV emission band is tentatively attributed to the radiative transition from C impurities occupying the B sites to the B vacancies. Moreover, the h-BN-based DUV photodetectors exhibit an outstanding performance, making it a promising prospect for optoelectronic applications.

Automated summary

As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h-BN) is gaining significant attention for its superior properties and wide applications. However, the luminescence properties of h-BN few-layers are rare due to its poor crystallinity. In this work, h-BN epilayers were synthesized on sapphire substrates by the submicron-spacing vapor deposition method. The low temperature cathodoluminescence spectra of h-BN epilayers exhibit strong deep ultraviolet (DUV) luminescence peaks and a defect-related emission band, showing potential for optoelectronic applications.