4.8 Article

Solution-processed highly bright and durable cesium lead halide perovskite light-emitting diodes

期刊

NANOSCALE
卷 8, 期 42, 页码 18021-18026

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr05330k

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资金

  1. Singapore National Research Foundation [NRF-NRFI2015-03, NRF-NRFI2016-08]
  2. Ministry of Education [MOE2013-T2-1-049, MOE2015-T2-1-047, 2013-T1-002-232]
  3. Competitive Research Programme (CRP) [NRF-CRP14-2014-03]

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Recently, CsPbBr3 perovskites have been emerging as very promising green emission materials for light-emitting diodes (LEDs) due to their high color purity, low cost and high photoluminescence quantum yield (PLQY). However, the corresponding LED performance is still low and far behind CH3NH3PbBr3; it is due to the lack of proper perovskite film preparation methods and interfacial engineering. Herein, we report highly bright and durable CsPbBr3-based LEDs fabricated using a one-step solution method. The precursor solution is prepared by simply dissolving CsPbBr3 powder and a CsBr additive in dimethyl sulfoxide (DMSO). We find that the CsBr additive not only significantly enhances the PLQY but also induces directional crystal growth into micro-plates, forming a smooth perovskite film for LEDs. LEDs employing such high quality films show a high luminance of 7276 cd m(-2) and high color purity with a full width at half maximum of 18 nm. Furthermore, the as-fabricated LEDs reveal an outstanding ambient stability with a decent luminance output (>100 cd m(-2), steady increase without any degradation trend) for at least 15 h under a constant driving current density (66.7 mA cm(-2)). And we propose two reasons for this unique luminance increasing behavior: (1) the CsPbBr3 perovskite is thermally stable and can survive from joule heat; and (2) on the other hand, the joule heating will induce interface or crystalline film annealing, reduce device resistance and then enhance the luminance output.

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