期刊
NANOSCALE
卷 8, 期 26, 页码 12990-12997出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6nr02902g
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资金
- Office of Naval Research [N000141210556]
- Department of Home-land Security [2014-DN-077-ARI069-02]
- National Science Foundation [ECCS-1348272]
In many applications of near-infrared (NIR) light detection, a band-pass filter is needed to exclude the noise caused by visible light. Here, we demonstrate a filterless, visible-blind, narrow-band NIR photodetector with a full-width at half-maximum of <50 nm for the response spectrum. These devices have a thick (>4 mu m) nanocomposite absorbing layers made of polymer-fullerene: lead sulfide (PbS) quantum dots (QDs). The PbS QDs yield a photoconductive gain due to their hole-trapping effect, which effectively enhances both the responsivity and the visible rejection ratio of the external quantum efficiency by >10 fold compared to those without PbS QDs. Encouragingly, the inclusion of the PbS QDs does not increase the device noise. We directly measured a noise equivalent power (NEP) of 6.1 pW cm(-2) at 890 nm, and a large linear dynamic range (LDR) over 11 orders of magnitude. The highly sensitive visible-blind NIR narrow-band photodetectors may find applications in biomedical engineering.
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