Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm(-2), the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the delta-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (similar to 4.0 lambda) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

Automated summary

In this study, low threshold green GaN-based VCSEL operating at room temperature was achieved by using self-formed InGaN quantum dots as the active region. The results provide important guidance for achieving high-performance GaN-based VCSELs.