期刊
NANO RESEARCH
卷 9, 期 12, 页码 3772-3780出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-016-1247-y
关键词
ReS2/MoS2 monolayers; van der Waals heterostructures; interlayer coupling interactions; optoelectronics
类别
资金
- National Natural Science Foundation of China [61471270, 51420105002, 51572199]
In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman-photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.
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