期刊
NANO RESEARCH
卷 9, 期 9, 页码 2803-2810出版社
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-016-1169-8
关键词
graphene; chemical vapor deposition (CVD); bilayer; growth mechanism
类别
资金
- National Basic Research Program of China [2013CBA01603]
- National Natural Science Foundation of China [61335006]
- Chinese Academy of Sciences [1731300500015, XDB07030100]
High-quality single-layered and bilayered graphene (SLG and BLG) was synthesized on copper foil surfaces by controllable chemical vapor deposition (CVD). Impurity nanoparticles formed on the copper foil surface by hightemperature annealing were found to play a crucial role in the growth of BLG. Analysis of energy-dispersive spectrometry (EDS) data indicated that these nanoparticles consisted of silicon and aluminum. According to the inverted wedding cake model, these nanoparticles served as nucleation centers for BLG growth and the free space between a nanoparticle and graphene served as the center of C injection for the continuous growth of the adlayer beneath the top layer. By combining phase-field theory simulations, we confirmed the mechanism of BLG growth and revealed more details about it in comparison with SLG growth. For the first time, this study led to a complete understanding of the BLG growth mechanism from nucleation to continuous growth in the CVD process, and it has opened a door to the thickness-controllable synthesis of graphene.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据