期刊
NANO LETTERS
卷 16, 期 10, 页码 6052-6057出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01987
关键词
Single-photon source; point defect; hexagonal boron nitride; zero-phonon line; line width; 2D material
类别
资金
- National Science Foundation [DMR-1254530, ECCS-15420819]
- NSF MRSEC program [DMR-1120296]
- AFOSR MURI
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1254530] Funding Source: National Science Foundation
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally resolved photon-cOrrelation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent line width, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 and 682 nm, which reveals a nearly identical temperature dependence despite a large.difference in transition energy. Our temperature-dependent results are well described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 Om line-is excited indirectly.
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