期刊
NANO LETTERS
卷 16, 期 7, 页码 4297-4304出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01342
关键词
Transition metal dichalcogenide; monolayer growth; CVD; IT '-MoTe2; weak antilocalization
类别
资金
- NSF [MRSEC DMR-1120901]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1334241] Funding Source: National Science Foundation
Growth of transition metal dichalcogenide (TMD) monolayers is of interest due to their unique electrical and optical properties. Films in the 2H and IT phases have been widely studied but monolayers of some 1T'-TMDs are predicted to be large-gap quantum spin Hall insulators, suitable for innovative transistor structures that can be switched via a topological phase transition rather than conventional carrier depletion [Qian et al. Science 2014, 346, 1344-1347]. Here we detail a reproducible method for chemical vapor deposition of monolayer, single-crystal flakes of 1T'-MoTe2. Atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy confirm the composition and structure of MoTe2 flakes. Variable temperature magnetotransport shows weak antilocalization at low temperatures, an effect seen in topological insulators and evidence of strong spin orbit coupling. Our approach provides a pathway to systematic investigation of monolayer, single-crystal 1T'-MoTe2 and implementation in next-generation nanoelectronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据