Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers

Ridged, orthorhombic two-dimensional atomic crystals with a bulk Pnma structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material platform for a host of applications. Key to their crystallinity, monolayers of these materials have a 4-fold degenerate structural ground state, and a single energy scale E-c (representing the elastic energy required to switch the longer lattice vector along the x- or y-direction) determines how disordered these monolayers are at finite temperature. Disorder arises when nearest neighboring atoms become gently reassigned as the system is thermally excited beyond a critical temperature T-c that is proportional to E-c/k(B). E-c is tunable by chemical composition and it leads to a classification of these materials into two categories: (i) Those for which E-c >= k(B)T(m), and (ii) those having k(B)T(m) > E-c >= 0, where T-m, is a given material's melting temperature. Black phosphorus and SiS monolayers belong to category (i): these materials do not display an intermediate order disorder transition and melt directly. All other monochalcogenide monolayers with E-c > 0 belonging to class (ii) will undergo a two-dimensional transition prior to melting. Ec/kB is slightly larger than room temperature for GeS and GeSe, and smaller than 300 K for SnS and SnSe monolayers, so that these materials transition near room temperature. The onset of this generic atomistic phenomena is captured by a planar Potts model up to the order-disorder transition. The order-disorder phase transition in two dimensions described here is at the origin of the Cmcm phase being discussed within the context of bulk layered SnSe.