期刊
NANO LETTERS
卷 16, 期 3, 页码 1989-1995出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b05263
关键词
Two-dimensional; heterostructure; graphene; boron-nitride; resonant tunneling
类别
资金
- NRI-SWAN center
- Intel Corp.
- NSF CAREER Award [DMR-0953784]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0953784] Funding Source: National Science Foundation
We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moire pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal, stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.
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